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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5359 DESCRIPTION *With TO-3PL package *Complement to type 2SA1987 APPLICATIONS *Power amplifier applications *Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Tc=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 230 230 5 15 1.5 180 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=8 A;IB=0.8A IC=7A ; VCE=5V VCB=230V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 30 200 MIN 230 0.4 1.0 TYP. 2SC5359 MAX UNIT V 3.0 1.5 5 5 160 V V A A MHz pF hFE-1 classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5359 Fig.2 Outline dimensions (unindicated tolerance:0.50mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5359 4 |
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